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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1452-1456

Enhancement of implantation efficiency by grid biasing in radio-frequency inductively coupled plasma direct-current plasma immersion ion implantation

(5) Tong, Honghui a,b Fu, Ricky K Y a Zeng, Xuchu a Kwok, Dixon T K a Chu, Paul K a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b SOUTHWESTERN INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRONS; PLASMA DENSITY; PLASMAS; PRESSURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE;

ARGON PLASMA; BIASED VOLTAGE; DIRECT CURRENT PLASMA IMMERSION ION IMPLANTATION; ELECTRON TEMPERATURE; GRID BIASING; PARTICLE-IN-CELL SIMULATION; PLASMA TOPOGRAPHY; SECONDARY ELECTRON EMISSION COEFFICIENT;

ION IMPLANTATION;

EID: 0035982559 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1494064 Document Type: Conference Paper

Times cited : (5)

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