Characteristics of nanowire SOI n-MOSFET with a gate length of 50 nm and a channel width of 100 nm

Journal of the Korean Physical Society

Volumn 41, Issue 4, 2002, Pages 509-513

  Cho, Won Ju ^a   Lee, Seongjae ^a   Jang, Moongyu ^a   Maeng, Sunglyul ^a   Kang, Tae Woong ^a   Park, Kyoung Wan ^a   Im, Kiju ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Channel thickness; Channelwidth; Gate length; Nano wire SOI MOSFET; Operation temperature

Indexed keywords

EID: 0035981419     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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