Reduction of reverse short-channel effect in high-energy implanted retrograde well

Journal of the Korean Physical Society

Volumn 40, Issue 4, 2002, Pages 649-652

  Lee, Hyeokjae ^a   Park, Young June ^b   Min, Hong Shick ^b   Shin, Hyungsoon ^c   Kang, Dae Gwan ^d  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b Seoul National University   (South Korea)

^c Ewha Womans University   (South Korea)

^d Hynix Semiconductor Inc   (South Korea)

Author keywords

CMOS; Diffused well; MOSFETs; Retrograde well; Reverse short channal effects; TED; Threshold voltage

Indexed keywords

EID: 0036012684     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.40.649     Document Type: Conference Paper

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