50-nm MOSFET with electrically induced source/drain extensions

Journal of the Korean Physical Society

Volumn 40, Issue 1, 2002, Pages 39-44

  Han, Sangyeon ^a   Chang, Sung Il ^a   Shin, Hyungcheol ^a   Lee, Jongho ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036002389     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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