Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers

Solid State Communications

Volumn 118, Issue 9, 2001, Pages 465-468

  Kim, T W ^a   Lee, D U ^a   Choo, D C ^a   Kim, H J ^a   Lee, H S ^b   Lee, J Y ^b   Kim, M D ^c   Park, S H ^d   Park, H L ^d  

^a Kwangwoon University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

A. Nanostructures; B. Crystal growth; D. Optical properties

Indexed keywords

CHARGE CARRIERS; CRYSTAL GROWTH; ELECTRON DIFFRACTION; ENERGY DISPERSIVE SPECTROSCOPY; IMAGE ANALYSIS; METALLOGRAPHIC MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

INTERBAND TRANSITIONS; MULTIPLE STACKED LAYERS; SELF-ASSEMBLED QUANTUM DOT ARRAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035978637     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00134-X     Document Type: Article

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