X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 3, 1999, Pages 199-202

  Qin, Zhixin ^a   Kobayashi, Masakazu ^a   Yoshikavva, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE; POLE FIGURES; RECIPROCAL SPACE MAPS;

SEMICONDUCTING FILMS;

EID: 0032678473     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008943911794     Document Type: Article

References (13)

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