Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 253-257

  Camassel, J ^a   Vicente, P ^a   Planes, N ^a   Allegre J ^a   Pankove, J ^b   Namavar, F ^c  

^a UNIV MONTPELLIER   (France)

^b Astralux Inc   (United States)

^c SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242892     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<253::AID-PSSB253>3.0.CO;2-W     Document Type: Article

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