Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 163-166

  Schenk, H P D ^a   Leroux, M ^a   De Mierry, P ^a   Laugt M ^a   Omnes F ^a   Gibart, P ^a  

^a CNRS   (France)

Author keywords

LP MOVPE; n InGaN:Si; PDS; PL; Stokes' shift; Van Roosbroeck Shockley

Indexed keywords

ABSORPTION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

STOKE'S SHIFT;

SEMICONDUCTING FILMS;

EID: 0035933210     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00695-4     Document Type: Article

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