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Volumn 80, Issue 1-3, 2001, Pages 108-111

Incorporation of InAs nanostructures in a silicon matrix: Growth, structure and optical properties

(14) Cirlin, G E a,b Polyakov, N K a,b Petrov, V N a Egorov, V A a Denisov, D V b Volovik, B V b Ustinov, V M b Alferov, Zh I b Ledentsov, N N b,c Heitz, R c Bimberg, D c Zakharov, N D d Werner, P d Gosele U d

a INSTITUTE FOR ANALYTICAL INSTRUMENTATION (Russian Federation)

b IOFFE INSTITUTE (Russian Federation)

c TECHNISCHE UNIVERSITÄT BERLIN (Germany)

d MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

InAs; Molecular beam epitaxy; Photoluminescence; Quantum dots; Silicon; Transmission electron microscopy

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SOLID SOLUTIONS; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSCALE ISLANDS;

SEMICONDUCTING FILMS;

EID: 0035932329 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00624-3 Document Type: Article

Times cited : (8)

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