Heteroepitaxial growth of InAs on Si: A new type of quantum dot

Semiconductors

Volumn 33, Issue 9, 1999, Pages 972-975

  Cyrlin, G E ^a   Petrov, V N ^a   Dubrovskii, V G ^a   Samsonenko, Yu B ^a   Polyakov, N K ^a   Golubok, A O ^a   Masalov, S A ^a   Komyak, N I ^a   Ustinov, V M ^b   Egorov, A Yu ^b   Kovsh, A R ^b   Maximov, M V ^b   Tsatsul'nikov, A F ^b   Volovik, B V ^b   Zhukov, A E ^b   Kop'ev, P S ^b   Ledentsov, N N ^b   Alferov, Zh I ^b   Bimberg, D ^c  

^a INSTITUTE FOR ANALYTICAL INSTRUMENTATION   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033196592     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187815     Document Type: Article

References (11)

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7. G. E. Cirlin, G. M. Guryanov, A. O. Golubok, S. Ya. Tipissev, N. N. Ledentsov, P. S. Kop'ev, M. Grundmann, and D. Bimberg, Appl. Phys. Lett. 67, 97 (1995).
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