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Volumn 80, Issue 1-3, 2001, Pages 224-231

The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides

(3) Stath, N a Harle V a Wagner, J b

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

Detector; GaN; Laser; Light emitting diodes; SiC

Indexed keywords

ANTIMONY COMPOUNDS; EPITAXIAL GROWTH; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUPERLATTICES;

ANTIMONIDES;

OPTOELECTRONIC DEVICES;

EID: 0035932212 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00607-3 Document Type: Article

Times cited : (17)

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