Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate

Applied Physics Letters

Volumn 75, Issue 15, 1999, Pages 2283-2285

  Misra, D ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000023691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124991     Document Type: Article

References (11)

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