Annealing effects on structures and optical properties of silicon nanostructured films prepared by pulsed-laser ablation in inert background gas

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5075-5080

  Makino, Toshiharu ^a   Yamada, Yuka ^a   Suzuki, Nobuyasu ^a   Yoshida, Takehito ^a   Onari, Seinosuke ^b  

^a PANASONIC CORPORATION   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890597     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1412834     Document Type: Article

References (28)

1. S. Furukawa and T. Miyasato, Jpn. J. Appl. Phys., Part 2 27, L2207 (1988).
2. H. Takagi, H. Ogawa, Y. Yamazaki, A. Ishizaki, and T. Nakagiri, Appl. Phys. Lett. 56, 2379 (1990).
3. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
4. Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, and Y. Masumoto, Appl. Phys. Lett. 59, 3168 (1991).
5. D. J. Lockwood, Light Emission in Silicon from Physics to Devices (Academic, San Diego, 1998).
6. D. B. Chrisey and G. K. Hubler, Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994).
7. D. H. Lowndes, D. B. Geohegan, A. A. Puretzky, D. P. Norton, and C. M. Rouleau, Science 273, 898 (1996).
8. E. Werwa, A. A. Seraphin, L. A. Chiu, C. Zhou, and K. D. Kolenbrander, Appl. Phys. Lett. 64, 1821 (1994).
9. T. Yoshida, S. Takeyama, Y. Yamada, and K. Mutoh, Appl. Phys. Lett. 68, 1772 (1996).
10. Y. Yamada, T. Orii, I. Umezu, S. Takeyama, and T. Yoshida, Jpn. J. Appl. Phys., Part 1 35, 1361 (1996).
11. T. Makimura, Y. Kunii, and K. Murakami, Jpn. J. Appl. Phys., Part 1 35, 4780 (1996).
12. D. B. Geohegan, A. A. Puretzky, G. Duscher, and S. J. Pennycook, Appl. Phys. Lett. 72, 2987 (1998).
13. T. Yoshida, Y. Yamada, and T. Orii, J. Appl. Phys. 83, 5427 (1998).
14. L. Patrone, D. Nelson, V. I. Safarov, M. Sentis, W. Marine, and S. Giorgio, J. Appl. Phys. 87, 3829 (2000).
15. N. Suzuki, T. Makino, Y. Yamada, T. Yoshida, and S. Onari, Appl. Phys. Lett. 76, 1389 (2000).
16. T. Yoshida, Y. Yamada, N. Suzuki, T. Makino, T. Orii, and S. Onari, Proc. SPIE 3618, 465 (1999).
17. I. H. Camphell and P. M. Fauchet, Solid State Commun. 58, 739 (1986).
18. J. Tauc, Amorphous and Liquid Semiconductors (Taylor and Francis, London, 1974).
19. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991).
20. H. Okamoto and Y. Hamakawa, J. Non-Cryst. Solids 77, 1441 (1985).
21. T. Takagahara and K. Takeda, Phys. Rev. B 46, 15578 (1992).
22. J. P. Proot, C. Delerue, and G. Allan, Appl. Phys. Lett. 61, 1948 (1992).
23. W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, Nature (London) 410, 192 (2001).
24. Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, Phys. Rev. B 48, 4883 (1993).
25. K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996).
26. D. B. Geohegan, A. A. Puretzky, G. Duscher, and S. J. Pennycook, Appl. Phys. Lett. 73, 438 (1998).
27. R. Tohmon, Y. Shimogaichi, H. Mizuno, Y. Ohki, K. Nagasawa, and Y. Hama, Phys. Rev. Lett. 62, 1388 (1989).
28. H. Nishikawa, T. Shiroyama, R. Nakamura, Y. Ohki, K. Nagasawa, and Y. Hama, Phys. Rev. B 45, 586 (1992).