Semiconductor nanocrystallite formation using inert gas ambient pulsed laser ablation and its application to light emitting devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3618, Issue , 1999, Pages 465-474

  Yoshida, Takehito ^a   Yamada, Yuka ^a   Suzuki, Nobuyasu ^a   Makino, Toshiharu ^a   Orii, Takaaki ^a   Onai, Seinosuke ^a  

^a Matsushita Research Institute Tokyo Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INERT GASES; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); THIN FILMS;

ELECTROLUMINESCENT DIODES; PULSED LASER ABLATION; QUANTUM CONFINEMENT EFFECTS; SEMICONDUCTOR NANOCRYSTALLITE;

LASER ABLATION;

EID: 0033362120     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (34)