Defect analysis in bonded and H+ split silicon-on-insulator wafers by photoluminescence spectroscopy and transmission electron microscopy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 10 SUPPL. B, 1998, Pages

  Tajima, Michio ^a   Ogura, Atsushi ^b   Karasawa, Tomoki ^a,c   Mizoguchi, Atsushi ^a,d  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

^c KEIO UNIVERSITY   (Japan)

^d TOKAI UNIVERSITY   (Japan)

Author keywords

Oxygen precipitation; Photoluminescence; Silicon on insulator; Smart Cut; Transmission electron microscopy; Unibond wafer

Indexed keywords

ANNEALING; BAND STRUCTURE; BONDING; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; HYDROGEN; OXYGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

HYDROGEN SPLITTING TECHNIQUE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032180678     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1199     Document Type: Article

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