Evaluation of buried oxide formation in low-dose SIMOX process

Applied Surface Science

Volumn 159, Issue , 2000, Pages 104-110

  Ogura, A ^a   Ono, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; OXIDES; SEMICONDUCTOR GROWTH; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

BURIED OXIDES; OXIDE PRECIPITATES; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034206657     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00056-8     Document Type: Article

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