Extension of dose window for low-dose separation by implanted oxygen

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1735-1737

  Ogura, Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COALESCENCE; HIGH TEMPERATURE OPERATIONS; OXYGEN; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICA; STOICHIOMETRY; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

LOW DOSE SEPARATION BY IMPLANTED OXYGEN (SIMOX);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032073542     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838549     Document Type: Article

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