Evaluation of depth profile of defects in ultrathin Si film on buried SiO2 formed by implanted oxygen

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1367-1369

  Ogura, Atsushi ^a   Tatsumi, Toru ^a   Hamajima, Tomohiro ^a   Kikuchi, Hiroaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000677512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117438     Document Type: Review

References (13)

1. O. W. Holland, D. K. Thomas, and D. S. Zhou, Appl. Phys. Lett. 66, 1892 (1995).
2. S. Visitserngtracl, S. J. Krause, and B. F. Cordts, J. Appl. Phys. 69, 1784 (1991).
3. S. Nakashima and K. Izumi, Electron. Lett. 26, 1647 (1990).
4. S. Nakashima and K. Izumi, J. Mater. Res. 8, 523 (1993).
5. I. Hamaguchi, T. Fujita, T. Yano, S. Hayashi, and K. Kajiyama, Jpn. J. Appl. Phys. 34, 2989 (1995).
6. D. Venables, S. J. Krause, J. C. Park, J. D. Lee, and P. Roitman, in 1994 IEEE International SOI Conference Proceedings (IEEE, New York, 1994), p. 49.
7. F. Secco d'Aragona, J. Electrochem. Soc. 119, 948 (1972).
8. H. Gassel, J. Peter-Weidemann, and H. Vogt, in Silicon on Insulator Technology and Devices, edited by W. E. Bailey (The Electrochemical Society, Pennington, 1991), p. 200.
9. U. Gösele, E. Schroer, and J.-Y. Huh, Appl. Phys. Lett. 67, 241 (1995).
10. B. J. Mrstik, P. J. McMarr, H. L. Hughes, M. J. Anc, and W. A. Krull, Appl. Phys. Lett. 67, 3283 (1995).
11. J. P. Collinge, IEEE Electron Device Lett. EDL-7, 244 (1986).
12. N. Guillemot, D. Tsoukalas, C. Tsamis, J. Margail, and A. M. Papon, J. Appl. Phys. 71, 1713 (1992).
13. T. Tatsumi, K. Aketagawa, and J. Sakai, J. Cryst. Growth 120, 275 (1992).