The effect of post-annealing on the electrical properties of (Pb,Sr)TiO3 thin films prepared by liquid source misted chemical deposition for ultra large-scale integration (ULSI) dynamic random access memory (DRAM) capacitor

Thin Solid Films

Volumn 394, Issue 1-2, 2001, Pages 212-217

  Chung, Hyun Jin ^a   Chung, Suk Jin ^a   Kim, Jin Hong ^a   Woo, Seong Ihl ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Annealing; Capacitors; Ferroelectric properties; PST

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; PERMITTIVITY; RANDOM ACCESS STORAGE; VLSI CIRCUITS;

RANDOM ACCESS MEMORY (RAM) CAPACITORS;

THIN FILMS;

EID: 0035881417     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(01)01015-x     Document Type: Article

References (13)