On-wafer continuous-wave operation of InGaN/GaN violet laser diodes

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1779-1780

  Hasnain, G ^a   Takeuchi, T ^a   Schneider, R ^a   Song, S ^a   Twist, R ^a   Blomqvist, M ^a   Kocot, C ^a   Flory, C ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THRESHOLD VOLTAGE; WAVEGUIDES; WSI CIRCUITS;

LASING WAVELENGTHS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0034296022     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001276     Document Type: Article

References (6)

1. NAKAMURA, S., SENOH, M., NAGAHAMA, S., IWASA, N., YAMADA, T., MATSUSHITA, T., KIYOKU, H., and SUGIMOTO, Y.: 'InGaN based multi-quantum-well laser diodes', Jpn. J. Appl. Phys., 1996, 35, pp. L74-L76
2. KOBAYASHI, T., NAKAMURA, F., NAGANUMA, K., TOJYO, T., NAKAJIMA, H., ASATSUMA, T., KAWAI, H., and IKEDA, M.: 'Room-temperature continuous wave operation of GaInN/GaN multiquantum well laser diode', Electron. Lett., 1998, 34, pp. 1495-1496
3. AKASAKI, I., SOTA, S., SAKAI, H., TANAKA, T., KOIKE, M., and AMANO, H.: 'Shortest wavelength semiconductor laser diode', Electron. Lett., 1996, 32, pp. 1105-1106
4. KURAMATA, A., KUBOTA, S., SOEJIMA, R., DOMEN, K., HORINO, K., and TANAHASHI, T.: 'Room-temperature continuous wave operation of InGaN laser diodes with vertical conducting structure on SiC substrate', Jpn. J. Appl. Phys., 1998, 37, pp. L1373-L1375
5. KNEISSL, M., BOUR, D.P., VAN DE WALLE, C.G., ROMANO, L.T., NORTHRUP, J.E., WOOD, R.M., TEEPE, M., and JOHNSON, N.M.: 'Room-temperature continuous wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure', Appl. Phys. Lett., 1999, 75, (4), pp. 581-583
6. FUNATO, K., HASHIMOTO, S., YANASHIMA, K., NAKAMURA, F., and IKEDA, M.: 'Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substrates', Appl. Phys. Lett., 1999, 75, (8), pp. 1137-1139