Long wavelength GaInAsP/InP laser with n-n contacts using AlAs/InP hole injecting tunnel junction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Sekiguchi, Shigeaki ^a   Kimura, Tadayoshi ^a   Miyamoto, Tomoyuki ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

ALUMINUM ARSENIDE; NEGATIVE DIFFERENTIAL RESISTANCE; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032629265     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l443     Document Type: Article

References (10)