Epitaxially stacked GaAs/GaAlAs lasers using a low-resistance tunnel junction

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 891-895

  Garcia, J Ch ^a   Rosencher, E ^a   Collot, Ph ^a   Laurent, N ^a   Guyaux, J L ^a   Nagle, J ^a   Chirlias, E ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; HETEROJUNCTIONS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TUNNEL JUNCTIONS;

EPITAXIAL INTERCONNECTION; THRESHOLD CURRENT DENSITY;

CHEMICAL BEAM EPITAXY;

EID: 0032680613     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01489-4     Document Type: Article

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