Electronic properties of boron in p-type bulk 6H-SiC

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 863-867

  Mitchel, W C ^a   Roth, Matthew ^a   Evwaraye, A O ^a   Yu, P W ^a   Smith, S R ^a,b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

Admittance spectroscopy; Boron; SiC

Indexed keywords

EID: 0000250943     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666650     Document Type: Article

References (16)

1. Proc. Fifth Conf. Silicon Carbide and Related Mater., eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman, No. 137 (Bristol: Institute of Physics, 1994).
2. M. Bhatnagar and B.J. Baliga, IEEE Trans. Electron Dev. 40, 645 (1993).
3. G. Pensl and W.J. Choyke, Phys. B 185, 264 (1993).
4. M. Ghezzo, D.M. Brown, E. Downey and J. Kretchmer, Appl. Phys. Lett. 63, 1206 (1993).
5. G.A. Lomakina, Sou. Phys. Solid State 7, 475 (1965).
6. A.I. Veinger, Yu.A. Vodakov, Yu,I. Kozlov, G.A. Lomakina, E.I. Mokhov, V.G. Odiong and V.I. Sokolov, Sov. Tech. Phys. Lett. 6, 566 (1980).
7. W. Suttrop, G. Pensl and P. Lanig, Appl. Phys. Lett. A 51, 231 (1990).
8. M.M. Anikin, A.A. Lebedev, A.L. Syrkin, A.V. Suvorov, Sov. Phys. Semicond. 19, 69 (1985).
9. H.M. Hobgood, J.P. McHugh, J. Greggi, R.H. Hopkins and M. Skowronski, Proc. Fifth Conf. Silicon Carbide and Related Mater., eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman, No. 137 (Bristol: Institute of Physics, 1994), p. 7.
10. N.I. Buchan, D.N. Henshall, W.S. Yoo, P.A. Mailloux and M.A. Tischler, Proc. Fifth Conf. Silicon Carbide and Related Mater., eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan and M. Rahman. No. 137 (Bristol: Institute of Physics, 1994), p. 113.
11. D.L. Losee, J. Appl. Phys. 46, 2204 (1975).
12. G. Lucovsky, Solid State Commun. 3, 299 (1965).
13. A.A. Kopylov and A.N. Pikhtin, Sov. Phys. Semicond. 8, 1563 (1975).
14. K. Hwang and A. Rhys, Proc. Roy. Soc. (London) Ser A 204, 406 (1950).
15. P.J. Dean, R.A. Faulkner and M. Ilegens, Phys. Rev. B 4, 1926 (1971).
16. P.W. Yu, K. Mahalingam, W.C. Mitchel, M.D. Roth and D.W. Fischer, accepted for publication in Proc. 1995 Compound Semiconductor Symposium, Cheju Island, Korea.