Impurity incorporation during sublimation bulk crystal growth of 6H- and 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 49-52

  Ohtani, N ^a   Katsuno, M ^a   Takahashi, J ^a   Yashiro, H ^a   Kanaya, M ^a   Shinoyama, S ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Atomic Force Microscopy; Impurity Incorporation; Sublimation Bulk Growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; MORPHOLOGY; NITROGEN; SILICON CARBIDE; SUBLIMATION;

SUBLIMATION GROWTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 3743068218     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.49     Document Type: Article

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