Activation of acceptors in Mg-doped, p-type GaN

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 595-600

  Gotz, W ^a   Johnson, N M ^a   Walker, J ^a   Bour, D P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL LATTICES; DISSOCIATION; HALL EFFECT; HYDROGENATION; IONIZATION OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE; REMOTE PLASMA HYDROGENATION SYSTEMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030387820     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-595     Document Type: Conference Paper

References (11)