Deep levels of tantalum in silicon carbide and incorporation during crystal growth

Applied Physics Letters

Volumn 79, Issue 15, 2001, Pages 2405-2407

  Grillenberger, J ^a   Pasold, G ^a   Witthuhn, W ^a   Achtziger, N ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035828567     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1407861     Document Type: Article

References (21)

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