SiC growth in tantalum containers by sublimation sandwich method

Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 254-258

  Mokhov, E N ^a   Ramm, M G ^a   Roenkov, A D ^a   Vodakov, Yu A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Container; Silicon carbide; Sublimation growth; Tantalum

Indexed keywords

CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INCLUSIONS; SUBLIMATION; TANTALUM;

POLYTYPE INCLUSIONS; SUBLIMATION SANDWICH METHOD;

SILICON CARBIDE;

EID: 0031268783     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00282-0     Document Type: Article

References (10)

1. Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm, A.D. Roenkov, Krist. Tech. 14 (1979) 729.
2. J. Drowart, G.De Maria, SiC - High Temperature Material, London, 1960, p. 16.
3. E.N. Mokhov, M.G. Ramm, A.D. Roenkov, A.A. Wolfson, A.S. Tregubova, I.L. Shulpina, J. Tech. Phys. Lett. 13 (1987) 641.
4. Y. Inomato, H. Tanaka, Yoguo-Kyo-Kai-Sci. 78 (1970) 323.
5. J.M. Harris, H.C. Gatos, A.F. Witt, J. Electrochem. Soc. 118 (1971) 335.
6. E.N. Mokhv, M.G. Ramm, Yu.A. Vodakov, High Purity Substances 3 (1992) 98 (in Russian).
7. G.F. Uldashev, M.M. Usmanova, Kh. Rakhmatullaeva, E.N. Mokhov, A.D. Roenkov, M.G. Ramm, Properties of Doped Semiconductor Materials, Moscow, 1990, p. 152.
8. E.N. Mokhov, I.L. Shulpina, A.S. Tregubova, Yu.A. Vodakov, Crystal Res. Technol. 16 (1981) 879.
9. E.N. Mokhov, M.G. Ramm, A.D. Roenkov, Yu.A. Vodakov, Properties Semiconductor Materials, Moscow, 1990, p. 51.
10. Yu.A. Vodakov, E.N. Mokhov, M.G. Ramm, A.D. Roenkov, Patent USSR N882247, 1980.