Backside laser testing of ICs for SET sensitivity evaluation

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2193-2201

  Lewis, Dean ^a   Pouget, Vincent ^a   Beaudoin, Felix ^b   Perdu, Philippe ^b   Lapuyade, Herve ^a   Fouillat, Pascal ^a   Touboul, André ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b CNES   (France)

Author keywords

Backside laser testing; Single event effect (SEE) sensitivity of linear ICs; Single event transient (SET) mapping

Indexed keywords

APPROXIMATION THEORY; ENERGY GAP; LIGHT ABSORPTION; OPERATIONAL AMPLIFIERS; PULSED LASER DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTOR DOPING; SENSITIVITY ANALYSIS; VLSI CIRCUITS;

SINGLE-EVENT TRANSIENT (SET) MAPPING;

INTEGRATED CIRCUIT TESTING;

EID: 0035723054     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983195     Document Type: Conference Paper

References (16)

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