Laser cross section measurement for the evaluation of single-event effects in integrated circuits

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1371-1375

  Pouget, V ^a   Fouillat, P ^a   Lewis, D ^a   Lapuyade, H ^a   Darracq, F ^a   Touboul, A ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001703685     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00147-5     Document Type: Article

References (6)

1. J.S. Melinger, D. McMorrow, A.B. Campbell, S. Buchner, L.H. Tran, A.R. Knudson, W.R. Curtice, "Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth", J. of Applied Physics, vol. 84-2, 690-703, 1998.
2. R. Jones, A.M. Chugg, C.M.S. Jones, P.H. Duncan, C.S. Dyer, C. Sanderson, "Comparison Between SRAM SEE Cross-Sections from Ion Beam Testing With Those Obtained Using a New Picosecond Pulsed Laser Facility", RADECS99,1999.
3. S.C. Moss, S.D. LaLumondiere, J.R. Scarpulla, K.P. McWilliams, W.R. Crain, R. Koga, "Correlation of Picosecond Laser-Induced and Energetic Particle-Induced Latchup in CMOS Test Structures", IEEE Trans. Nucl. Sc., vol 42-6, 1948-1956, 1995.
4. V.Pouget, D.Lewis, H.Lapuyade, R. Briand, P.Fouillat, L.Sarger, M.-C.Calvet, "Validation of Radiation Hardened Designs by Pulsed Laser Testing and SPICE Analysis", ESREF99, Microelectronics Reliability, 39, 931-935, 1999.
5. V. Pouget, "Simulation expérimentale par impulsions laser ultra-courtes des effets des radiations ionisantes sur les circuits intégŕs", Ph.D Thesis, University Bordeaux 1, to be published in July 2000.
6. H. Lapuyade, P. Fouillat, Y. Maidon, J. Tomas, J.P. Dom, "Design for testability of built-in laser sensitive cells", Proc. of ESREF95, 467-472, 1995.