Resonant interband tunneling current in InAs/AISb/GaSb/AISb/InAs diodes with extremely thin AISb barrier layers

Applied Physics Letters

Volumn 71, Issue 4, 1997, Pages 512-514

  Kitabayashi, H ^a   Waho, T ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001485549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119594     Document Type: Article

References (10)

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