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Volumn 47, Issue 6 III, 2000, Pages 2662-2668

Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; PULSED LASER APPLICATIONS; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES;

EID: 0034451406     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903823     Document Type: Conference Paper
Times cited : (25)

References (20)
  • 14
    • 33847596250 scopus 로고
    • Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
    • (1983) Phys. Rev. B , vol.27 , pp. 985
    • Aspnes, D.E.1    Studna, A.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.