|
Volumn 47, Issue 6 III, 2000, Pages 2662-2668
|
Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CARRIER CONCENTRATION;
PULSED LASER APPLICATIONS;
RADIATION EFFECTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICES;
CHARGE COLLECTION CHARACTERISTICS;
LASER PULSE ENERGY;
LOW POWER ULTRAHIGH SPEED;
HIGH ELECTRON MOBILITY TRANSISTORS;
|
EID: 0034451406
PISSN: 00189499
EISSN: None
Source Type: Journal
DOI: 10.1109/23.903823 Document Type: Conference Paper |
Times cited : (25)
|
References (20)
|