Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1856-1861

  Carlone, Cosmo ^a   Parenteau, Martin ^b   Houdayer, Alain ^c   Hinrichsen, Peter ^a   Vincent, John ^b,c  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c TRIUMF   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; EPITAXIAL GROWTH; IRRADIATION; PHOTOLUMINESCENCE; RADIATION DAMAGE; SCATTERING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON; SPECTROSCOPY;

DONOR TO ACCEPTOR TRANSITION; NONIONIZING ENERGY LOSS (NIEL); PROTON INELASTIC SCATTERING; PROTON IRRADIATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031386206     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658953     Document Type: Article

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