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Volumn 46, Issue 6 PART 1, 1999, Pages 1603-1607

Photoluminescence study of gallium arsenide irradiated with 15 MeV alpha particles

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; GAMMA RAYS; IRRADIATION; LOW TEMPERATURE OPERATIONS; PHOTOLUMINESCENCE; RADIATION DAMAGE; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; TEMPERATURE;

EID: 0033307566     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819127     Document Type: Article
Times cited : (1)

References (17)
  • 15
    • 33747276571 scopus 로고    scopus 로고
    • and C. J. Harris Activation of Germanium acceptors during SiCl reactive-ion etching of MOCVD GaAs epitaxial layers, presented at Institute of Physics Conference Series, 1990
    • J. Weber, W. D. Sawyer, and C. J. Harris Activation of Germanium acceptors during SiCl reactive-ion etching of MOCVD GaAs epitaxial layers, presented at Institute of Physics Conference Series, 1990
    • W. D. Sawyer
    • Weber, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.