-
1
-
-
0027844647
-
-
pp. 1372-1379, 1993
-
G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R, J. Walters, Damage Correlation in Semiconductors Exposed to Gamma, Electron and Proton Radiations, IEEE Trans. Nacl. Sei., vol. NS-40, pp. 1372-1379, 1993
-
E. A. Burke, P. Shapiro, S. R. Messenger, and R, J. Walters, Damage Correlation in Semiconductors Exposed to Gamma, Electron and Proton Radiations, IEEE Trans. Nacl. Sei., Vol. NS-40
-
-
Summers, G.P.1
-
2
-
-
0031386206
-
-
pp. 1856-1861, 1997
-
C. Carlone, M. Parenteau, A. Houdayer, P. Hinrichsen, and J. Vincent, Photoluminescence study of gallium vacancy defects in gallium arsenide irradiated by relativistic protons, IEEE Trans. Nucl, Sei., vol. NS-44, pp. 1856-1861, 1997
-
M. Parenteau, A. Houdayer, P. Hinrichsen, and J. Vincent, Photoluminescence Study of Gallium Vacancy Defects in Gallium Arsenide Irradiated by Relativistic Protons, IEEE Trans. Nucl, Sei., Vol. NS-44
-
-
Carlone, C.1
-
3
-
-
0029517909
-
-
2104-2107, 1995
-
A. L. Barry, A. J. Houdayer, P. F. Hinrichsen, W. G. Letourneau, and J. Vincent, The Energy Dependence of Lifetime Damage Constants in GaAS for 1-500 MeV Protons, IEEE Trans. Nucl. Sei., vol. NS-42, pp, 2104-2107, 1995
-
A. J. Houdayer, P. F. Hinrichsen, W. G. Letourneau, and J. Vincent, The Energy Dependence of Lifetime Damage Constants in GaAS for 1-500 MeV Protons, IEEE Trans. Nucl. Sei., Vol. NS-42, Pp
-
-
Barry, A.L.1
-
4
-
-
33747208497
-
-
pp. 2078- 2081, 1995
-
V. A. Didik, V. V. Kozlovskii, R. S. Malkovich, and E. A. Skoryatina, Distribution of isotopes produced in gallium arsenide as a result of bombardment by high-energy protons, deuterons, and 3He nuclei, Semiconductors, vol, 29, pp. 2078- 2081, 1995
-
V. V. Kozlovskii, R. S. Malkovich, and E. A. Skoryatina, Distribution of Isotopes Produced in Gallium Arsenide As A Result of Bombardment by High-energy Protons, Deuterons, and 3He Nuclei, Semiconductors, Vol, 29
-
-
Didik, V.A.1
-
5
-
-
33747284636
-
-
Inc., 1978
-
C. M. Lederer and V. S. Shirley, Table of Isotopen, Seventh Edition, Seventh ed. New York: John Wiley and Sons, Inc., 1978
-
Table of Isotopen, Seventh Edition, Seventh Ed. New York: John Wiley and Sons
-
-
Lederer, C.M.1
Shirley, V.S.2
-
6
-
-
0029516285
-
-
pp. 2095-2100, 1995
-
S. M. Khanna, A. Jorio, C. Carlone, M. Parenteau, A. Houdayer, and J. W. G. Jr., Particle dependence of the gaiiwm vacancy production in irradiated n-type gallium arsenide, IEEE Trans. Nvcl. Sei., vol. NS- 42, pp. 2095-2100, 1995
-
A. Jorio, C. Carlone, M. Parenteau, A. Houdayer, and J. W. G. Jr., Particle Dependence of the Gaiiwm Vacancy Production in Irradiated N-type Gallium Arsenide, IEEE Trans. Nvcl. Sei., Vol. NS- 42
-
-
Khanna, S.M.1
-
7
-
-
0032319627
-
-
pp. 2808-2812, 1998
-
P. F. Hinrichsen, A. J. Houdayer, A. L. Barry, and J. Vincent, Proton Induced Damage in SiC Light Emitting Diodes, IEEE Trans. Nvcl. Sei., vol. NS- 45, pp. 2808-2812, 1998
-
A. J. Houdayer, A. L. Barry, and J. Vincent, Proton Induced Damage in SiC Light Emitting Diodes, IEEE Trans. Nvcl. Sei., Vol. NS- 45
-
-
Hinrichsen, P.F.1
-
8
-
-
33747264617
-
-
1956, pp. 305-448
-
F. Seitz and J. S. Koehler, Solid State Physics Vol 2, F. Seitz and D. Turnbull, Eds. New York: Academic Press, 1956, pp. 305-448
-
Solid State Physics Vol 2, F. Seitz and D. Turnbull, Eds. New York: Academic Press
-
-
Seitz, F.1
Koehler, J.S.2
-
9
-
-
0025660893
-
-
pp. 1726-1731, 1990
-
A. L. Barry, R. Maxseiner, R. Wojcik, M. A. Briere, and D. Braunig, An Improved Displacement Damage Monitor,'IEEE Trans. Nvcl. Sei vol. NS- 37, pp. 1726-1731, 1990
-
R. Maxseiner, R. Wojcik, M. A. Briere, and D. Braunig, An Improved Displacement Damage Monitor,'IEEE Trans. Nvcl. Sei Vol. NS- 37
-
-
Barry, A.L.1
-
10
-
-
33747240795
-
-
pp. 148-149, 1993
-
V. A, Didik, V. V. Kozlovskii, R. S. Maîkovich, and E. A. Skoryatina, Profiles of isotopes in II1-V semiconductor compounds formed as a result of bombardment with high-energy a particles, Semicinductors, vol. 27, pp. 148-149, 1993
-
Didik, V. V. Kozlovskii, R. S. Maîkovich, and E. A. Skoryatina, Profiles of Isotopes in II1-V Semiconductor Compounds Formed As A Result of Bombardment with High-energy A Particles, Semicinductors, Vol. 27
-
-
-
11
-
-
0030368616
-
-
vol. NS-43, 1996
-
S. M. Khanna, A. Houdayer, A. Jorio, C. Carlone, M. Parenteau, and J. W. G. Jr., Nuclear Radiation Displacement Damage prediction in Gallium Arsenide through low temperature photoluminescence measurements, IEEE Trans. Nvcl. Sei., vol. NS-43, 1996
-
A. Houdayer, A. Jorio, C. Carlone, M. Parenteau, and J. W. G. Jr., Nuclear Radiation Displacement Damage Prediction in Gallium Arsenide Through Low Temperature Photoluminescence Measurements, IEEE Trans. Nvcl. Sei.
-
-
Khanna, S.M.1
-
12
-
-
33747313288
-
-
pp. 189-190, 1993
-
V. A. Didik, V. V. Kozlovskii, R. S. Maîkovich, and E, A. Skoryatina, Profiles of the isotopes formed in Gallium Arsenide by bombarding it with a particles of energies 12, 16, and 20 MeV, Semiconductors, vol. 27, pp. 189-190, 1993
-
V. V. Kozlovskii, R. S. Maîkovich, and E, A. Skoryatina, Profiles of the Isotopes Formed in Gallium Arsenide by Bombarding It with A Particles of Energies 12, 16, and 20 MeV, Semiconductors, Vol. 27
-
-
Didik, V.A.1
-
13
-
-
0025213663
-
-
pp. 85 90, 1990.
-
L. F. Zakharenkov, V. V. Kozlovskii, and B. A. Shustrov, Transmutation Doping of Indium Phosphide and Gallium Arsenide due to Protons an oc-Particles, Phys. stat. sol. (a), vol. 117, pp. 85 90, 1990.
-
V. V. Kozlovskii, and B. A. Shustrov, Transmutation Doping of Indium Phosphide and Gallium Arsenide Due to Protons An Oc-Particles, Phys. Stat. Sol. (A), Vol. 117
-
-
Zakharenkov, L.F.1
-
15
-
-
33747276571
-
-
and C. J. Harris Activation of Germanium acceptors during SiCl reactive-ion etching of MOCVD GaAs epitaxial layers, presented at Institute of Physics Conference Series, 1990
-
J. Weber, W. D. Sawyer, and C. J. Harris Activation of Germanium acceptors during SiCl reactive-ion etching of MOCVD GaAs epitaxial layers, presented at Institute of Physics Conference Series, 1990
-
W. D. Sawyer
-
-
Weber, J.1
-
16
-
-
2842525993
-
-
pp. 1041, 1979
-
D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. B. Mullin, A. M. White, and P. D. Greene, The incorporation and Characterization of Acceptors in Epitaxial GaAs, Journal of Physical Chemistry Sol, vol. 36, pp. 1041, 1979
-
P. J. Dean, D. T. J. Hurle, J. B. Mullin, A. M. White, and P. D. Greene, The Incorporation and Characterization of Acceptors in Epitaxial GaAs, Journal of Physical Chemistry Sol, Vol. 36
-
-
Ashen, D.J.1
-
17
-
-
0039617364
-
-
pp. 4703-4705, 1993.
-
S. Kim, M. Kim, Y. Kim, K. S. Eom, S. Min, and C. Lee, Low Temperature Photoluminescence characteristics of carbon doped GaAs, Journal of Applied Physics, vol. 73, pp. 4703-4705, 1993.
-
M. Kim, Y. Kim, K. S. Eom, S. Min, and C. Lee, Low Temperature Photoluminescence Characteristics of Carbon Doped GaAs, Journal of Applied Physics, Vol. 73
-
-
Kim, S.1
|