Enhancement of fmax in InP/InGaAs HBT's by selective MOCVD growth of heavily-doped extrinsic base regions

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1812-1817

  Ida, Minoru ^a   Yamahata, Shoji ^a   Kurishima, Kenji ^a   Ito, Hiroshi ^a   Kobayashi, Takashi ^a   Matsuoka, Yutaka ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; FILM GROWTH; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

EXTRINSIC BASE LAYER REGROWTH; MAXIMUM OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030287462     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543012     Document Type: Article

References (15)

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