D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 463-468

  Hwang, Hann Ping ^a,b   Shieh, Jia Lin ^a,c   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c Procomp Informatics Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; GAIN CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HIGH COLLECTOR-EMITTER BREAKDOWN VOLTAGES; THREADING DISLOCATIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033100942     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00310-4     Document Type: Article

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