Avalanche multiplication in InP/InGaAs double heterojunction bipolar transistors with composite collectors

IEEE Transactions on Electron Devices

Volumn 47, Issue 6, 2000, Pages 1125-1133

  Wang, Hong ^a   Ng, Geok Ing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; ELECTRONS; IMPACT IONIZATION; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

AVALANCHE MULTIPLICATION; COMPOSITE COLLECTORS; ELECTRON MULTIPLICATION; LOCAL ELECTRIC FIELDS; NONLOCAL EFFECT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033731779     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842953     Document Type: Article

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