Demonstration of aluminum-free metamorphic InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 379-381

  Wang, Hong ^a   Ng, Geok Ing ^a   Zheng, Haiqun ^a   Xiong, Yong Zhong ^a   Chua, Lye Heng ^a   Yuan, Kaihua ^a   Radhakrishnan, K ^a   Yoon, Soon Fatt ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; GAIN CONTROL; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

ALUMINUM-FREE METAMORPHICS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); SOLID-SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034258882     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

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