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Volumn 537, Issue , 1999, Pages
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Physics-based intrinsic model for AIGaN/GaN HEMTs
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Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
ELECTRON TRANSPORT PROPERTIES;
FERMI LEVEL;
INTERFACES (MATERIALS);
MONTE CARLO METHODS;
POISSON DISTRIBUTION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR QUANTUM WELLS;
ALUMINUM GALLIUM NITRIDE;
GALLIUM NITRIDE;
HETEROINTERFACE;
SCHRODINGER EQUATION;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0033322565
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (4)
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References (9)
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