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Volumn 537, Issue , 1999, Pages

Physics-based intrinsic model for AIGaN/GaN HEMTs

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); MONTE CARLO METHODS; POISSON DISTRIBUTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

EID: 0033322565     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (4)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.