Fully monolithically integrated 40-Gbit/s transmitter and receiver

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 54, Issue 3, 2001, Pages

  Takeyari, R ^a   Watanabe, K ^a   Shirai, M ^a   Tanoue, T ^a   Masuda, T ^a   Washio, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CURRENT DENSITY; HEAT RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TIME DIVISION MULTIPLEXING;

DRIVING VOLTAGE; MODULATOR MODULE; SEMICONDUCTOR MODULATOR;

OPTICAL COMMUNICATION;

EID: 0034820178     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 1.2 Tbit/s (30×42.7-Gbit/s ETDM optical channel) WDM transmission over 376 km with 125-km spacing using forward error correction and carrier-suppressed RZ format
2. 1.28 Tbit/s WDM transmission of 32 ETDM channels at 40 Gbit/s over 3×100 km distance
3. 40 Gb/s TDM fully-monolithically-integrated transmitter based on InP/InGaAs HBT technology
4. 40-Gbit/s optical transmitter and receiver using InP HBT and SiGe HBT ICs
5. Low driving voltage optical modulators for 40-Gbit/s applications
6. Device technology of InP/InGaAs HBTs for 40-Gb/s optical transmission application
7. 82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs