40Gbit/s, fully-integrated 1:2 demultiplexer IC using InAIAs/InGaAs/InP HEMTs

Electronics Letters

Volumn 33, Issue 16, 1997, Pages 1409-1410

  Otsuji, T ^a   Yoneyama, M ^a   Imai, Y ^a   Enoki, T ^a   Umeda, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Demultiplexing equipment; Optical communication equipment

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION EQUIPMENT; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VLSI CIRCUITS;

DEMULTIPLEXING EQUIPMENT;

MULTIPLEXING EQUIPMENT;

EID: 0031188470     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970942     Document Type: Article

References (7)

1. FELDER, A., MÖLLER, M., POPP, J., REST, M., REIN, H.-M., and TREITINGER, L.: '30GHz static 2:1 frequency divider and 46Gbit/s multiplexer/demultiplexer ICs in a 0.6μm Si bipolar technology'. Tech. Dig. Symp. VLSI Circuits, 1995, pp. 117-118
2. OTSUJI, T., YONEYAMA, M., IMAI, Y., YAMAGUCHI, S., ENOKI, T., UMEDA, Y., and SANO, E.: '46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InA1As/InGaAs/InP HEMTs', Electron. Lett., 1996, 32, (7), pp. 685-686
3. BERROTH, M., LANG, M., WANG, Z.-G., LAO, Z., THIEDE, A., RIEGER-MOTZER, M., BRONNER, W., KAUFEL, G., KÖHLER, K., HÜLSMANN, A., and SCHNEIDER, J.: '20-40Gbit/s 0.2μm GaAs HEMT chip set for optical data receiver'. Tech. Dig. IEEE GaAs IC Symp., 1996, pp. 133-136
4. ENOKI, T., ITO, H., IKUTA, K., and ISHII, Y.: '0.1μm InA1As/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD'. Int. Conf. Indium Phosphide and Related Materials. Conf. Proc., Hokkaido, Japan, 1995, pp. 81-88
5. ENOKI, T., UMEDA, Y., OSAFUNE, K., ITO, H., and ISHII, Y.: 'Ultra-high-speed InA1As/InGaAs HEMT ICs using pn-level-shift diodes'. Tech. Dig. Int. Electron Device Meet., 1995, pp. 193-196
6. OTSUJI, T., YONEYAMA, M., IMAI, Y., ENOKI, T., and UMEDA, Y.: 'A 64-Gbit/s 2:1 multiplexer IC using InA1As/InGaAs/InP HEMTs', submitted to Electron. Lett.
7. MURATA, K., OHHATA, M., TOGASHI, M., and SUZUKI, M.: '20Gbit/s GaAs MESFET multiplexer IC using a novel T-type flip-flop circuit', Electron. Lett., 1992, 28, (22), pp. 2090-2091