Quantum dot lasers for high power and telecommunication applications

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2001, Pages 269-270

  Reithmaier, J P ^a   Klopf, F ^a   Krebs, R ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; EMISSION SPECTROSCOPY; MIRRORS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR SUPERLATTICES; TELECOMMUNICATION SYSTEMS; WAVEGUIDES;

BRAGG REFLECTORS; CARRIER CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 0035651244     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Extremely low room-temperature threshold current density diode lasers using InAs dots in an In Ga As quantum well
2. InGaAs/GaAs quantum dot lasers
3. High temperature properties of GaInAs/AlGaAs-lasers with improved carrier confinement by short period superlatrice quantum well barriers
4. InGaAs/AlGaAs quantum Dot DFB lasers operating up to 213 °C temperature
5. High performance GaInAs/GaAs quantum dot lasers with improved temperature properties
6. Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers
7. Lowthreshold current density 1.3 μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
8. High temperature operating 1.3 μm quantum-dot lasers for telecommunication applications
9. InAs/GaInAs quantum dot DFB lasers emitting at 1.3 μm