Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 615-617

  Fry, P W ^a   Harris, L ^a   Parnell, S R ^a   Finley, J J ^a   Ashmore, A D ^a   Mowbray, D J ^a   Skolnick, M S ^a   Hopkinson, M ^a   Hill, G ^a   Clark, J C ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001129785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371908     Document Type: Article

References (15)

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15. Because the 2 mm cavity device used for these measurements lases at ≈60 mA it is not possible to experimentally observe the saturation of the second excited state transition. The saturation value for this transition is obtained by finding an appropriate function to fit the data for the ground and first excited slate transitions and then using this function, with suitably modified parameters, to determine the saturated intensity for the second excited state transition.