High-resolution nitride etching using hydrogen implantation effect

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2911-2916

  Ezaki, Mizunori ^a   Kato, Yoshihide ^a   Tojo, Tooru ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DISLOCATIONS (CRYSTALS); HYDROGEN; ION IMPLANTATION; IRRADIATION; NITROGEN; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION DRY ETCHING PROCESS; HYDROGEN IMPLANTATION EFFECT; MAGNETIC NEUTRAL LOOP DISCHARGE; NITRIDE ETCHING METHOD; PLASMA INDUCED DAMAGE;

NITRIDES;

EID: 0035519776     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1420581     Document Type: Article

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