Pulse measurements quantify dispersion in PHEMTs

Conference Proceedings of the International Symposium on Signals, Systems and Electronics

Volumn , Issue , 1998, Pages 444-449

  Parker, Anthony E ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN OVERSHOOT; GATE LAG; OUTPUT POWER REDUCTION; PULSE CHARACTERIZATION TECHNIQUE; PULSED BIAS MEASUREMENT; TIME CONSTANTS; TRAPPING EFFECTS;

CHARACTERIZATION; COMPUTER SIMULATION; DATA REDUCTION; ELECTRIC CURRENTS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTROMAGNETIC DISPERSION; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032217896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)

1. D. E. Root, "Foundations of measurmeent-based modeling for nonlinear circuit simulations," in IEEE MTT-S New Directions in Nonlinear RF and Microwave Characetization Workshop (WMFF), June 1996.
2. D. McGinty, D. E. Root, and J. Perdomo, "A production FET modeling and library generation system (FLAMBE: Fast Library and Model Building Engine)," in International Conference on GaAs Manufacturing Technololgy (MANTECH) '97, June 1997.
3. P. H. Ladbrooke and S. R. Blight, "Low-field low-frequency dispersion of transconductance in gaas mes-fet's with implications for other rate-dependent anomalies," IEEE Transactions on Electron Devices, vol. 35, pp. 257-267, Mar. 1988.
4. J. B. Scott, J. G. Rathmell, A. E. Parker, and M. M. Sayed, "Pulsed device measurements and applications," IEEE Transactions on Microwave Theory and Techniques, vol. 44, pp. 2718-2723, Dec. 1996.
5. CNERF, "Pulsed-bias semiconductor parameter analyser," 1996. [Online]. Available: URL: http://mpce.mq.edu.au/elec/cnerf/apspa
6. B. Taylor, M. M. Sayed, and K. Kerwin, "A pulsed bias/RF environment for device characterisation," in IEEE Automated RF Test Group (ARFTG), 2 Dec. 1993.
7. A. E. Parker and J. B. Scott, "Method for determining correct timing for pulsed-I/V measurement of GaAs FETs," IEE Electronics Letters, vol. 31, pp. 1697-1698, 14 Sept. 1995.
8. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-dignal equivalent circuit," IEEE Transactions on Microwave Theory and Techniques, vol. 36, pp. 1151-1159, July 1988.
9. A. E. Parker and D. J. Skellern, "A realistic large-signal MESFET model for SPICE," IEEE Transactions on Microwave Theory and Techniques, vol. 45, pp. 1563-1571, Sept. 1997.
10. D. R. Webster, A. E. Parker, and D. G. Haigh, "HEMT model based on the Parker-Skellern MESFET model," IEE Electronics Letters, vol. 32, pp. 493-494, 29 Feb. 1996.