Leakage current in polysilicon TFTs: Experiments and interpretation

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 415-418

  Colalongo, L ^a,b   Valdinoci, M ^a   Baccarani, G ^a   Migliorato, P ^c   Tallarida, G ^c   Reita, C ^d  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006696959     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Valdinoci et a/., NUPAD'94 Proa, p. 19, 1994
2. De Graaff et al., Solid-State Electronics, 25, 1, p. 67, 1982
3. J. L. Hartke, J. Appl. Physics, 39, 1, p. 4871, 1968
4. G. A. M. Hurkx et al, IEEE T-ED, 39, 2, p. 33, 1992
5. L. Colalongo et al, Solid-State Electronics, to be published