The origin of the anomalous off-current in SOI-transistors

European Solid-State Device Research Conference

Volumn , Issue , 1989, Pages 759-762

  Mcdaid, L J ^a   Hall, S ^a   Eccleston, W ^a   Alderman, J C ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Plessey Research Caswell   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ON INSULATOR TECHNOLOGY; SOLID STATE DEVICES;

DEPLETION REGION; GATE VOLTAGES; JUNCTION DIODE; REVERSE LEAKAGE CURRENT; SILICON-ON- INSULATORS (SOI); SOI TRANSISTORS; STRONG DEPENDENCES; TERMINAL VOLTAGES;

LEAKAGE CURRENTS;

EID: 84907813574     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-642-52314-4_159     Document Type: Conference Paper

References (0)