Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 397-400

  Weingartner R ^a   Bickermann, M ^a   Hofmann, D ^a   Rasp, M ^a   Straubinger, T L ^a   Wellmann, P J ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRON TRANSITIONS; ENERGY GAP; HALL EFFECT; NUMERICAL ANALYSIS; OPTICAL PROPERTIES; SHRINKAGE;

ABSORPTION BANDS; BAND FILLING; BAND GAP ABSORPTION TRANSITIONS; BAND SHRINKAGE; BAND TAILING EFFECTS; DOPING LEVEL EVALUATION;

SILICON CARBIDE;

EID: 14344270403     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.397     Document Type: Article

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