Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivation

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 586-589

  Heinlein, Christian ^a   K Grepstad, Jostein ^a   Fimland, Bjørn Ove ^a   Berge, Torunn ^b  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; INTERFACES (MATERIALS); MASKS; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

ELECTROLYTIC CARRIER PROFILING; EPILAYERS; HOMOEPITAXIAL REGROWTH INTERFACES; THERMAL DECAPPING;

MOLECULAR BEAM EPITAXY;

EID: 0032688637     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01416-X     Document Type: Article

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