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Volumn 118, Issue 1-4, 1996, Pages 43-46
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Measurement of the stopping powers for channeled ions in ion implanted single crystals
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL IMPURITIES;
HYDROGEN;
ION IMPLANTATION;
IONS;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON;
SINGLE CRYSTALS;
TARGETS;
BEAM MISALIGNMENT;
ION BEAM CHANNELING METHOD;
RESONANCE BACKSCATTERING;
STOPPING POWERS;
PARTICLE BEAM DYNAMICS;
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EID: 0030565051
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/0168-583X(95)01191-9 Document Type: Article |
Times cited : (12)
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References (19)
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