Controlled growth of bulk 15R-SiC single crystals by the modified Lely method

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Schulze, Norbert ^a   Barrett, Donovan ^a   Weidner, Michael ^a   Pensl, Gerhard ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; HALL EFFECT; HIGH TEMPERATURE EFFECTS; NITROGEN; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; SUBLIMATION; THERMODYNAMIC STABILITY;

MODIFIED LELY METHOD;

SILICON CARBIDE;

EID: 12944309907     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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